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        Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Super Fast Recovery Diode RFU10TF6S ?Series ?Dimentions(Unit : mm) ?Structure Ultra Fast Recovery ?Applications General rectification ?Features 1)Single type.(TO-220) 2)Ultra High switching speed ?Construction Silicon epitaxial plnner ?Absolute maximum ratings(Tc=25?C) Symbol VRM VR Average rectified forward current Io 60Hz half sin wave, Resistance load, Tc=50?C Tj Tstg ?Electrical characteristics(Tj=25?C) Symbol Min. UnitConditions Typ. Max. Forward voltage VF -V2.3 2.8 Reverse current IR - μA Reverse recovery time trr - ns Thermal Resistance Rth(j-c) - ?C / W Storage temperature ?55 to ?150 ?C A one cycle peak value, Tj=25?C Junction temperature 150 ?C Forward current surge peak IFSM 60Hz half sin wave, Non-repetitive 100 10 A Reverse voltage Direct voltage 600 V Repetitive peak reverse voltage Duty≦0.5 600 V Parameter Conditions Limits Unit junction to case - 3.5 10 IF=0.5A,IR=1A,Irr=0.25×IR 16 25 VR=600V 0.03 Parameter IF=10A (1) (3) (1) (3) 1/3 2011.06 - Rev.A |